| PART |
Description |
Maker |
| LNC707PS |
High Power Output Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| LNC705PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| LNC702PS |
GaAlAs Semiconductor Laser
|
PANASONIC[Panasonic Semiconductor]
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| ADL-65075TA2 |
General purpose red laser light source Laser pointer lndustrial laser markers measuring instruments
|
Roithner LaserTechnik GmbH
|
| STM51007N STM51007G STM51007GE9410 |
FIBER OPTIC LASER DIODE EMITTER, 1280-1330nm, 1000Mbps, PANEL MOUNT, TO-18, FC CONNECTOR
1300 nm Laser, Medium Power
|
INFINEON TECHNOLOGIES AG
|
| STL81004A STL81004H STL81004X STL81005A STL81005H |
(STL81004x / STL81005x) 1550 nm Laser in Coaxial Package with SM-Pigtail / Low Power
From old datasheet system
1550 nm Laser in Coaxial Package with SM-Pigtail Low Power
1550 nm Laser in Coaxial Package with SM-Pigtail,Low Power
1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power
1500 nm Laser, Low Power
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
